On the origin of spin loss in GaMnN/InGaN light-emitting diodes
Identifieur interne : 00A601 ( Main/Repository ); précédent : 00A600; suivant : 00A602On the origin of spin loss in GaMnN/InGaN light-emitting diodes
Auteurs : RBID : Pascal:04-0165764Descripteurs français
- Pascal (Inist)
- 8560J, 7550D, 7225D, 7860F, 7855C, 8115H, 7866F, Etude expérimentale, Gallium composé, Manganèse composé, Indium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Diode électroluminescente, Epitaxie jet moléculaire, Transport polarisé en spin, Matériau ferromagnétique, Electroluminescence, Photoluminescence, Couche épitaxique semiconductrice, Croissance semiconducteur.
English descriptors
- KwdEn :
- Electroluminescence, Experimental study, Ferromagnetic materials, Gallium compounds, III-V semiconductors, Indium compounds, Light emitting diodes, Manganese compounds, Molecular beam epitaxy, Photoluminescence, Semiconductor epitaxial layers, Semiconductor growth, Spin polarized transport, Wide band gap semiconductors.
Abstract
Spin polarization of GaMnN/InGaN light-emitting diodes grown by molecular beam epitaxy is analyzed. In spite of the ferromagnetic behavior of the GaMnN spin injector, the diodes are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. © 2004 American Institute of Physics.
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Buyanova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping</wicri:regionArea><wicri:noRegion>S-581 83 Linkoping</wicri:noRegion></affiliation><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>US Army Research Office, Research Triangle Park, North Carolina 27709</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>US Army Research Office, Research Triangle Park</wicri:cityArea></affiliation></author><author><name sortKey="Izadifard, M" uniqKey="Izadifard M">M. Izadifard</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping</wicri:regionArea><wicri:noRegion>S-581 83 Linkoping</wicri:noRegion></affiliation></author><author><name sortKey="Chen, W M" uniqKey="Chen W">W. M. Chen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping</wicri:regionArea><wicri:noRegion>S-581 83 Linkoping</wicri:noRegion></affiliation></author><author><name sortKey="Kim, J" uniqKey="Kim J">J. Kim</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Chemical Engineering, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Ren, F" uniqKey="Ren F">F. Ren</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Chemical Engineering, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Thaler, G" uniqKey="Thaler G">G. Thaler</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Abernathy, C R" uniqKey="Abernathy C">C. R. Abernathy</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Pearton, S J" uniqKey="Pearton S">S. J. Pearton</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Pan, C C" uniqKey="Pan C">C.-C. Pan</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electrical Engineering, National Central University, Chung-Li 32054, Taiwan, Republic of China</s1><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Electrical Engineering, National Central University, Chung-Li 32054, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author><author><name sortKey="Chen, G T" uniqKey="Chen G">G.-T. Chen</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electrical Engineering, National Central University, Chung-Li 32054, Taiwan, Republic of China</s1><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Electrical Engineering, National Central University, Chung-Li 32054, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author><author><name sortKey="Chyi, J I" uniqKey="Chyi J">J.-I. Chyi</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electrical Engineering, National Central University, Chung-Li 32054, Taiwan, Republic of China</s1><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Electrical Engineering, National Central University, Chung-Li 32054, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author><author><name sortKey="Zavada, J M" uniqKey="Zavada J">J. M. Zavada</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping</wicri:regionArea><wicri:noRegion>S-581 83 Linkoping</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0165764</idno><date when="2004-04-05">2004-04-05</date><idno type="stanalyst">PASCAL 04-0165764 AIP</idno><idno type="RBID">Pascal:04-0165764</idno><idno type="wicri:Area/Main/Corpus">00BB61</idno><idno type="wicri:Area/Main/Repository">00A601</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electroluminescence</term><term>Experimental study</term><term>Ferromagnetic materials</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Light emitting diodes</term><term>Manganese compounds</term><term>Molecular beam epitaxy</term><term>Photoluminescence</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Spin polarized transport</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560J</term><term>7550D</term><term>7225D</term><term>7860F</term><term>7855C</term><term>8115H</term><term>7866F</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Manganèse composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Diode électroluminescente</term><term>Epitaxie jet moléculaire</term><term>Transport polarisé en spin</term><term>Matériau ferromagnétique</term><term>Electroluminescence</term><term>Photoluminescence</term><term>Couche épitaxique semiconductrice</term><term>Croissance semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Spin polarization of GaMnN/InGaN light-emitting diodes grown by molecular beam epitaxy is analyzed. In spite of the ferromagnetic behavior of the GaMnN spin injector, the diodes are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>14</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>On the origin of spin loss in GaMnN/InGaN light-emitting diodes</s1></fA08><fA11 i1="01" i2="1"><s1>BUYANOVA (I. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>IZADIFARD (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHEN (W. 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M.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>12 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Electrical Engineering, National Central University, Chung-Li 32054, Taiwan, Republic of China</s1><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA14 i1="05"><s1>US Army Research Office, Research Triangle Park, North Carolina 27709</s1></fA14><fA20><s1>2599-2601</s1></fA20><fA21><s1>2004-04-05</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. 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